(a) The percolation model for gate leakage of metal nanocrystals floating gate memory. (b) Schematic structure diagram of the floating gate memory based on discrete Pt nanocrystals/h-BN/MoS 2 van der ...
Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, has successfully developed a prototype of a large-capacity, high-bandwidth flash memory module essential for large-scale ...
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