KnowMade has launched two patent monitoring services dedicated to SiC technology: the SiC Substrates & Epitaxial Wafers ...

SHENZHEN, GUANGDONG, CHINA, June 22, 2026 /EINPresswire.com/ -- In a rapidly evolving semiconductor landscape, GNS ...

Many electric vehicle (EV) power electronics systems use silicon carbide (SiC) and gallium nitride (GaN) devices. These ...

A new class of medium-voltage power modules has been introduced to support next-generation energy infrastructure, offering ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar ...

The new 1200V IGBT power module, offered in a CPAK-EDC package, targets high-efficiency and reliable industrial power conversion systems. CISSOID expanded its industry standard power module portfolio ...

CISSOID’s new CMT-PLA1BL12300MA half-bridge IGBT power module integrates Trench Gate Field Stop (TG-FS) IGBT technology in a CPAK-EDC package to support 1200 V blocking and 300 A nominal current with ...

Responding to the growing demand for high-voltage automotive IGBT chips, Infineon Technologies developed a new generation of products: the EDT3 (Electric Drive Train, 3rd generation) chips designed ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers an efficient, affordable solution for drivetrains and accessories. CGD's ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...